Full name Familienname, Vorname
Lagger, Peter Willibald
 

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PreviewAuthors / EditorsTitleTypeIssue Date
1Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, G. ; Pogany, Dionyz ; Prechtl, G. ; Detzel, T. ; Häberlen, O. The role of defects on reliability aspects in GaN power devicesPräsentation Presentation2019
2Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defectsPräsentation Presentation2018
3Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Grill, Alexander ; Stradiotto, Roberta ; Pobegen, Gregor ; Grasser, Tibor ; Pietschnig, R ; Pogany, Dionyz Review of bias-temperature instabilities at the III-N/dielectric interfacePräsentation Presentation2017
4Lagger, Peter Willibald ; Donsa, Stefan ; Spreitzer, P. ; Pobegen, G. ; Reiner, Maria ; Naharashi, H. ; Mohamed, J. ; Mösslacher, M. ; Prechtl, G. ; Pogany, Dionyz ; Ostermaier, C Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heatersKonferenzbeitrag Inproceedings2015
5Ostermaier, C ; Lagger, Peter Willibald ; Prechtl, G. ; Grill, Alexander ; Grasser, Tibor ; Pogany, Dionyz The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structuresPräsentation Presentation2015
6Reiner, Maria ; Lagger, Peter Willibald ; Prechtl, G. ; Steinschifter, Patrick ; Pietschnig, R ; Pogany, Dionyz ; Ostermaier, Clemens Modification of "Native" Surface Donor States in AlGaN/GaN MIS-HEMTs by Fluorination: Perspective for Defect EngineeringKonferenzbeitrag Inproceedings2015
7Capriotti, M ; Lagger, Peter Willibald ; Fleury, Clement ; Stradiotto, Roberta ; Oposich, Martin ; Ostermaier, C ; Strasser, Gottfried ; Pogany, Dionyz Effect of III-N Barrier Resistance on CV Characteristics in GaN-based MOSHEMTs in Spill-Over RegimePräsentation Presentation2014
8Lagger, Peter Willibald ; Reiner, Maria ; Denifl, G ; Stadtmüller, Michael ; Pogany, Dionyz ; Ostermaier, C Understanding the Fundamental Limitations for the Improvement of Forward Gate Bias induced Vth Drift Stability of GaN based MIS-HEMTsPräsentation Presentation2014
9Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Pobegen, Gregor ; Pogany, Dionyz Is PBTI at the dielectric/III‐N interface limited by interface traps?Präsentation Presentation2014
10Lagger, Peter Willibald ; Ostermaier, C ; Pogany, Dionyz Enhancement of Vth Drift for Repetitive Gate Stress Pulses due to Charge Feedback Effect in GaN MIS-HEMTsKonferenzbeitrag Inproceedings2014
11Lagger, Peter Willibald ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTsArtikel Article2013
12Lagger, Peter Willibald ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTSKonferenzbeitrag Inproceedings2013
13Rupp, Karl ; Lagger, Peter Willibald ; Grasser, Tibor Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport EquationKonferenzbeitrag Inproceedings 2012
14Ostermaier, C ; Lagger, Peter Willibald ; Alomari, M ; Herfurth, Patrick ; Maier, D ; Alexewicz, Alexander ; di Forte Poisson, Marie-Antoinette ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz ; Kohn, Erhard Reliability Investigation of the Degradation of the Surface Passivation of InAlN/GaN HEMTs using a Dual Gate StructurePräsentation Presentation2012
15Lagger, Peter Willibald ; Ostermaier, C ; Pobegen, G. ; Pogany, Dionyz Toward understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTsKonferenzbeitrag Inproceedings2012
16Rupp, Karl ; Lagger, Peter Willibald ; Grasser, Tibor ; Jüngel, Ansgar Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport EquationKonferenzbeitrag Inproceedings2012