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Record link: 
http://hdl.handle.net/20.500.12708/91220
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Title: 
The role of defects on reliability aspects in GaN power devices
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Citation: 
Ostermaier, C., Lagger, P. W., Reiner, M., Pobegen, G., Pogany, D., Prechtl, G., Detzel, T., & Häberlen, O. (2019). The role of defects on reliability aspects in GaN power devices. IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, United States of America (the). http://hdl.handle.net/20.500.12708/91220
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Publication Type: 
Presentation - Conference Presentation
en
Authors: 
Ostermaier, C 
Lagger, Peter Willibald 
Reiner, Maria 
Pobegen, G. 
Pogany, Dionyz 
Prechtl, G. 
Detzel, T. 
Häberlen, O. 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Date (published): 
2019
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Event name: 
IEEE International Integrated Reliability Workshop (IIRW) 
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Event date: 
13-Oct-2019 - 17-Oct-2019
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Event place: 
Fallen Leaf Lake, CA, United States of America (the)
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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Appears in Collections:
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