IEEE International Integrated Reliability Workshop (IIRW)

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Description

Event name
IEEE International Integrated Reliability Workshop (IIRW)
 
Event type
Event for scientific audience
 
Start date
09-10-2022
End date
14-10-2022
 
Location
South Lake Tahoe, CA
Country
United States
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-17 of 17 (Search time: 0.005 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Tyaginov, S.E. ; Jech, M. ; Rzepa, G. ; Grill, A. ; El-Sayed, A.-M. ; Pobegen, G. ; Makarov, A. ; Grasser, T. Border Trap Based Modeling of SiC Transistor Transfer CharacteristicsKonferenzbeitrag Inproceedings 2018
2Waltl, Michael Characterization and Modeling of Single Charge Trapping in MOS TransistorsKonferenzbeitrag Inproceedings 2019
3Vandemaele, Michiel ; Kaczer, Ben ; Stanojevic, Zlatan ; Tyaginov, Stanislav ; Makarov, Alexander ; Chasin, Adrian ; Mertens, Hans ; Linten, Dimitri ; Groeseneken, Guido Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETsKonferenzbeitrag Inproceedings 2018
4Tselios, K. ; Stampfer, B. ; Michl, J. ; Ioannidis, E. ; Enichlmair, H. ; Waltl, M. Distribution of Step Heights of Electron and Hole Traps in SiON nMOS TransistorsKonferenzbeitrag Inproceedings 2020
5Scharlotta, Jean-Yean ; Bersuker, Gennadi ; Tyaginov, S. E. ; Young, Chadwing ; Haase, Gaddi ; Rzepa, Gerhard ; Waltl, Michael ; Chohan, Talha ; Iyer, Subramanian ; Kotov, Alexander ; Zambelli, Cristian ; Guarin, Fernando ; Puglisi, Francesco Maria ; Ostermaier, C IIRW 2019 Discussion Group II: Reliability for Aerospace ApplicationsKonferenzbeitrag Inproceedings2019
6Waldhoer, D. ; Wimmer, Y. ; El-Sayed, A. M. ; Goes, W. ; Waltl, M. ; Grasser, T. Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide DefectsKonferenzbeitrag Inproceedings 2019
7Reiter, Tobias ; Klemenschits, Xaver ; Filipovic, Lado Modeling Plasma-Induced Damage During the Dry Etching of SiliconInproceedings Konferenzbeitrag9-Oct-2022
8Vasilev, Alexander ; Jech, Markus ; Grill, Alexander ; Rzepa, Gerhard ; Schleich, Christian ; Makarov, Alexander ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael ; Tyaginov, Stanislav Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC TransistorsKonferenzbeitrag Inproceedings 2020
9Makarov, Alexander ; Roussel, Philippe ; Bury, Erik ; Vandemaele, Michiel ; Spessot, Alessio ; Linten, Dimitri ; Kaczer, Ben ; Tyaginov, Stanislav On Correlation between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero VariabilityKonferenzbeitrag Inproceedings 2019
10Kaczer, Ben ; Amoroso, S. M. ; Hussin, Razaidi ; Asenov, A ; Franco, J. ; Weckx, P. ; Roussel, Ph. J. ; Rzepa, Gerhard ; Grasser, Tibor ; Horiguchi, N. On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defectsKonferenzbeitrag Inproceedings2016
11Tyaginov, S.E. ; Makarov, A. ; Jech, M. ; Franco, J. ; Sharma, P. ; Kaczer, B. ; Grasser, T. On the effect of interface traps on the carrier distribution function during hot-carrier degradationKonferenzbeitrag Inproceedings 2016
12Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTIKonferenzbeitrag Inproceedings 2018
13Tyaginov, S. ; Jech, M. ; Sharma, P. ; Franco, J. ; Kaczer, B. ; Grasser, T. On the temperature behavior of hot-carrier degradationKonferenzbeitrag Inproceedings2015
14Filipovic, Lado Reliability and Stability of MEMS Microheaters for Gas SensorsKonferenzbeitrag Inproceedings2021
15Filipovic, Lado Reliability of Platinum Microheater Geometries for MEMS-Based Gas SensorsInproceedings Konferenzbeitrag2022
16Stampfer, B. ; Simicic, M. ; Weckx, P. ; Abbasi, A. ; Kaczer, B. ; Grasser, T. ; Waltl, M. Statistical Characterization of BTI and RTN using Integrated pMOS ArraysKonferenzbeitrag Inproceedings 2019
17Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit OperationKonferenzbeitrag Inproceedings2017