Reiter, T., Klemenschits, X., & Filipovic, L. (2022). Modeling Plasma-Induced Damage During the Dry Etching of Silicon. In 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). IEEE. https://doi.org/10.1109/IIRW56459.2022.10032764
E360 - Institut für Mikroelektronik E360-01 - Forschungsbereich Mikroelektronik
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Published in:
2022 IEEE International Integrated Reliability Workshop (IIRW)
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ISBN:
978-1-6654-5369-1
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Date (published):
9-Oct-2022
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Event name:
IEEE International Integrated Reliability Workshop (IIRW)
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Event date:
9-Oct-2022 - 14-Oct-2022
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Event place:
South Lake Tahoe, CA, United States of America (the)
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Number of Pages:
5
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Publisher:
IEEE, Piscataway
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Keywords:
Plasma-induced physical damage; Dry plasma etching; Process simulation; Modeling and simulation
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Abstract:
A novel framework for the simulation of plasma-induced damage based on an adapted binary collision model is presented. The presented approach allows for the physical simulation of plasma damage during transient dry etch process simulations. The developed model is applied to two different substrate geometries, capturing plasma-induced damage caused by ion bombardment throughout the transient etch simulation. A detailed comparison to experimental data shows that even this simple collision model produces accurate results and thus provides a description of complex damage profiles for the entire duration of the processing step.
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Project title:
Prozessabhängige Struktur-Emulation als Kooptimierungsstrategie für die Bauelementetechnologie: 878662 (FFG - Österr. Forschungsförderungs- gesellschaft mbH; Global TCAD Solutions GmbH)
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Research Areas:
Surfaces and Interfaces: 20% Nanoelectronics: 20% Modeling and Simulation: 60%
