Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)

Event name
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)
Event type
Event for scientific audience
Start date
End date
Cardiff, Unided Kingdom
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-12 of 12 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kuzmik, Jan ; Bychikhin, Sergey ; Dubec, Victor ; Blaho, M. ; Marso, M ; Kordos, P ; Suski, T ; Bockowski, M ; Grzegory, I ; Pogany, Dionyz Characterization of III-Nitride Group Semiconductors and Devices Using Optical MethodsKonferenzbeitrag Inproceedings2005
2Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical SimulationKonferenzbeitrag Inproceedings2013
3Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, J. GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access RegionKonferenzbeitrag Inproceedings2012
4Kuzmik, Jan ; Pozzovivo, Gianmauro ; Ostermaier, Clemens ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz InAlN/GaN HEMTs: a new perspective in degradation limits of III-N HEMTs?Konferenzbeitrag Inproceedings2009
5Kuzmik, Jan ; Bychikhin, Sergey ; Lossy, Richard ; Würfl, Hans-Joachim ; di Forte Poisson, Marie-Antoinette ; Teyssier, Jean-Pierre ; Gaquière, Christophe ; Pogany, Dionyz Investigation of the cooling effect introduced by the airbridge structure in the multifinger AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2006
6Koller, Christian ; Pobegen, Gregor ; Ostermaier, C ; Huber, M. ; Pogany, Dionyz Leakage and voltage blocking behavior of carbon-doped GaN buffer layersPräsentation Presentation2017
7Fleury, Clement ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Zhytnytska, Rimma ; Würfl, Joachim ; Derluyn, Joff ; Visalli, Domenica ; Strasser, Gottfried ; Pogany, Dionyz Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si SubstratesKonferenzbeitrag Inproceedings2013
8Pozzovivo, Gianmauro ; Kuzmik, Jan ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; di Forte Poisson, Marie-Antoinette ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz Optimization of the plasma etching in fabrication of InAlN/AlN/GaN HEMTsKonferenzbeitrag Inproceedings2007
9Marko, Paul ; Alexewicz, Alexander ; Hilt, O ; Meneghesso, Gaudenzio ; Würfl, Joachim ; Zanoni, Enrico ; Strasser, Gottfried ; Pogany, Dionyz Random telegraph noise and bursts in reverse-bias-stressed AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2012
10Magerl, Gottfried ; Brazil, Thomas J. Review of the achievements within the TARGET Network of ExcellenceKonferenzbeitrag Inproceedings2007
11Kuzmik, Jan ; Pozzovivo, Gianmauro ; Cico, Karol ; Golka, Sebastian ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Fröhlich, Karol ; Strasser, Gottfried ; Pogany, Dionyz Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTsKonferenzbeitrag Inproceedings2007
12Alexewicz, Alexander ; Ostermaier, Clemens ; Henkel, Christoph ; Bethge, Ole ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Pogany, Dionyz ; Bertagnolli, Emmerich ; Strasser, Gottfried Threshold Voltage Scaling In E-Mode Inaln/aln-Gan Hemts On Si SubstratesKonferenzbeitrag Inproceedings2011