Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)

Event name
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)
 
Event type
Event for scientific audience
 
Start date
15-05-2005
End date
18-05-2005
 
Location
Cardiff, Unided Kingdom
Country
Austria
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-12 of 12 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kuzmik, Jan ; Bychikhin, Sergey ; Dubec, Victor ; Blaho, M. ; Marso, M ; Kordos, P ; Suski, T ; Bockowski, M ; Grzegory, I ; Pogany, Dionyz Characterization of III-Nitride Group Semiconductors and Devices Using Optical MethodsKonferenzbeitrag Inproceedings2005
2Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical SimulationKonferenzbeitrag Inproceedings2013
3Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, J. GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access RegionKonferenzbeitrag Inproceedings2012
4Kuzmik, Jan ; Pozzovivo, Gianmauro ; Ostermaier, Clemens ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz InAlN/GaN HEMTs: a new perspective in degradation limits of III-N HEMTs?Konferenzbeitrag Inproceedings2009
5Kuzmik, Jan ; Bychikhin, Sergey ; Lossy, Richard ; Würfl, Hans-Joachim ; di Forte Poisson, Marie-Antoinette ; Teyssier, Jean-Pierre ; Gaquière, Christophe ; Pogany, Dionyz Investigation of the cooling effect introduced by the airbridge structure in the multifinger AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2006
6Koller, Christian ; Pobegen, Gregor ; Ostermaier, C ; Huber, M. ; Pogany, Dionyz Leakage and voltage blocking behavior of carbon-doped GaN buffer layersPräsentation Presentation2017
7Fleury, Clement ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Zhytnytska, Rimma ; Würfl, Joachim ; Derluyn, Joff ; Visalli, Domenica ; Strasser, Gottfried ; Pogany, Dionyz Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si SubstratesKonferenzbeitrag Inproceedings2013
8Pozzovivo, Gianmauro ; Kuzmik, Jan ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; di Forte Poisson, Marie-Antoinette ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz Optimization of the plasma etching in fabrication of InAlN/AlN/GaN HEMTsKonferenzbeitrag Inproceedings2007
9Marko, Paul ; Alexewicz, Alexander ; Hilt, O ; Meneghesso, Gaudenzio ; Würfl, Joachim ; Zanoni, Enrico ; Strasser, Gottfried ; Pogany, Dionyz Random telegraph noise and bursts in reverse-bias-stressed AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2012
10Magerl, Gottfried ; Brazil, Thomas J. Review of the achievements within the TARGET Network of ExcellenceKonferenzbeitrag Inproceedings2007
11Kuzmik, Jan ; Pozzovivo, Gianmauro ; Cico, Karol ; Golka, Sebastian ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Fröhlich, Karol ; Strasser, Gottfried ; Pogany, Dionyz Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTsKonferenzbeitrag Inproceedings2007
12Alexewicz, Alexander ; Ostermaier, Clemens ; Henkel, Christoph ; Bethge, Ole ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Pogany, Dionyz ; Bertagnolli, Emmerich ; Strasser, Gottfried Threshold Voltage Scaling In E-Mode Inaln/aln-Gan Hemts On Si SubstratesKonferenzbeitrag Inproceedings2011