Full name Familienname, Vorname
de Orio, R.L.
 

Results 1-15 of 15 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Hadámek, T. ; Fiorentini, S. ; Bendra, M. ; Ender, J. ; de Orio, R.L. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element ApproachArtikel Article 2022
2Ceric, H. ; de Orio, R.L. ; Selberherr, S. Microstructural Impact on Electromigration Reliability of Gold InterconnectsKonferenzbeitrag Inproceedings 2022
3Ender, J. ; de Orio, R.L. ; Fiorentini, S. ; Selberherr, S. ; Goes, W. ; Sverdlov, V. Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement LearningArtikel Article 2021
4de Orio, R.L. ; Ender, J. ; Fiorentini, S. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM SimulationsArtikel Article 2021
5Fiorentini, S. ; Ender, J. ; Selberherr, S. ; de Orio, R.L. ; Goes, W. ; Sverdlov, V. Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel JunctionsArtikel Article 2021
6Ender, J. ; de Orio, R.L. ; Fiorentini, S. ; Selberherr, S. ; Goes, W. ; Sverdlov, V. Improving failure rates in pulsed SOT-MRAM switching by reinforcement learningKonferenzbeitrag Inproceedings 2021
7de Orio, R.L. ; Makarov, A. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V. Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free LayerArtikel Article 2020
8de Orio, R.L. ; Makarov, A. ; Selberherr, S. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V. Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAMArtikel Article 2020
9Fiorentini, S. ; de Orio, R.L. ; Selberherr, S. ; Ender, J. ; Goes, W. ; Sverdlov, V. Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed CurrentKonferenzbeitrag Inproceedings 2020
10Filipovic, L. ; de Orio, R.L. ; Zisser, W.H. ; Selberherr, S. Modeling electromigration in nanoscaled copper interconnectsKonferenzbeitrag Inproceedings2017
11Baer, E. ; Evanschitzky, P. ; Lorenz, J. ; Roger, F. ; Minixhofer, R. ; Filipovic, L. ; de Orio, R.L. ; Selberherr, S. Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon ViasArtikel Article 2015
12Filipovic, L. ; de Orio, R.L. ; Selberherr, S. ; Singulani, A. ; Roger, F. ; Minixhofer, R. Effects of sidewall scallops on open tungsten TSVsKonferenzbeitrag Inproceedings 2014
13de Orio, R.L. ; Ceric, H. ; Selberherr, S. Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon ViaArtikel Article2012
14de Orio, R.L. ; Ceric, H. ; Selberherr, S. A Compact Model for Early Electromigration Failures of Copper Dual-Damascene InterconnectsArtikel Article2011
15Ceric, H. ; de Orio, R.L. ; Cervenka, J. ; Selberherr, S. A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern InterconnectsArtikel Article2009