Full name Familienname, Vorname
Lemme, M.C.
 
Main Affiliation Organisations­zuordnung
 

Results 1-7 of 7 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Polyushkin, Dmitry ; Piacentini, A. ; Uzlu, Burkay ; Grundmann, A. ; Heuken, M. ; Kalisch, H. ; Vescan, A. ; Müller, Thomas ; Lemme, M.C. ; Neumaier, D. Flexible CMOS inverters based on transition metal dichalcogenidesPresentation Vortrag2023
2Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 InsulatorsKonferenzbeitrag Inproceedings2022
3Illarionov, Yury ; Rzepa, Gerhard ; Waltl, Michael ; Pandey, H. ; Kataria, S. ; Passi, V. ; Lemme, M.C. ; Grasser, Tibor A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETsKonferenzbeitrag Inproceedings 2016
4Illarionov, Yury ; Waltl, Michael ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M.C. ; Grasser, Tibor Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistorsKonferenzbeitrag Inproceedings2015
5Illarionov, Yu. Yu. ; Waltl, M. ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Mueller, T. ; Lemme, M.C. ; Grasser, T. Hot-carrier degradation in single-layer double-gated graphene field-effect transistorsKonferenzbeitrag Inproceedings2015
6Illarionov, Yury ; Waltl, Michael ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Lemme, M.C. ; Grasser, Tibor Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect TransistorsKonferenzbeitrag Inproceedings2015
7Illarionov, Yury ; Smith, A.D. ; Vaziri, S. ; Ostling, M. ; Müller, Thomas ; Lemme, M.C. ; Grasser, Tibor Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability ChallengeKonferenzbeitrag Inproceedings 2014