DC FieldValueLanguage
dc.contributor.advisorSelberherr, Siegfried-
dc.contributor.authorGehring, Andreas-
dc.date.accessioned2020-06-30T11:09:35Z-
dc.date.issued2003-
dc.identifier.urihttps://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-12051-
dc.identifier.urihttp://hdl.handle.net/20.500.12708/12170-
dc.descriptionZsfassung in dt. Sprache-
dc.formatXVIII, 159 Bl.-
dc.languageEnglish-
dc.language.isoen-
dc.subjectHalbleiterbauelementde
dc.subjectTunneleffektde
dc.subjectSimulationde
dc.titleSimulation of tunneling in semiconductor devicesen
dc.typeThesisen
dc.typeHochschulschriftde
dc.contributor.assistantBertagnolli, Emmerich-
tuw.publication.orgunitE360 - Institut für Mikroelektronik-
dc.type.qualificationlevelDoctoral-
dc.identifier.libraryidAC04082019-
dc.description.numberOfPages159-
dc.identifier.urnurn:nbn:at:at-ubtuw:1-12051-
dc.thesistypeDissertationde
dc.thesistypeDissertationen
item.fulltextwith Fulltext-
item.openairetypeThesis-
item.openairetypeHochschulschrift-
item.cerifentitytypePublications-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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