DC FieldValueLanguage
dc.contributor.advisorKosina, Hans-
dc.contributor.authorSmirnov, Sergey-
dc.date.accessioned2020-06-30T11:10:29Z-
dc.date.issued2003-
dc.identifier.urihttps://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-11422-
dc.identifier.urihttp://hdl.handle.net/20.500.12708/12174-
dc.descriptionZsfassung in dt. Sprache-
dc.formatXVI, 122 Bl.-
dc.languageEnglish-
dc.language.isoen-
dc.subjectHalbleiterschichtde
dc.subjectSiliciumde
dc.subjectGermaniumde
dc.subjectElektronentransportde
dc.titlePhysical modeling of electron transport in strained silicon and silicon-germaniumen
dc.typeThesisen
dc.typeHochschulschriftde
dc.contributor.assistantSelberherr, Siegfried-
tuw.publication.orgunitE360 - Institut für Mikroelektronik-
dc.type.qualificationlevelDoctoral-
dc.identifier.libraryidAC04082352-
dc.description.numberOfPages122-
dc.identifier.urnurn:nbn:at:at-ubtuw:1-11422-
dc.thesistypeDissertationde
dc.thesistypeDissertationen
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openaccessfulltextOpen Access-
item.openairetypeThesis-
item.openairetypeHochschulschrift-
item.fulltextwith Fulltext-
item.languageiso639-1en-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.cerifentitytypePublications-
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