<div class="csl-bib-body">
<div class="csl-entry">Rupp, K., Jungemann, C., Hong, S.-M., Bina, M., Grasser, T., & Jüngel, A. (2016). A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation. <i>Journal of Computational Electronics</i>. https://doi.org/10.1007/s10825-016-0828-z</div>
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The final publication is available at Springer via <a href=" https://doi.org/10.1007/s10825-016-0828-z" target="_blank">https://doi.org/10.1007/s10825-016-0828-z</a>.
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dc.description.abstract
The Boltzmann transport equation is commonly considered to be the best semi-classical description of carrier transport in semiconductors, providing precise information about the distribution of carriers with respect to time (one dimension), location (three dimensions), and momentum (three dimensions). However, numerical solutions for the seven-dimensional carrier distribution functions are very demanding. The most common solution approach is the stochastic Monte Carlo method, because the gigabytes of memory requirements of deterministic direct solution approaches has not been available until recently. As a remedy, the higher accuracy provided by solutions of the Boltzmann transport equation is often exchanged for lower computational expense by using simpler models based on macroscopic quantities such as carrier density and mean carrier velocity. Recent developments for the deterministic spherical harmonics expansion method have reduced the computational cost for solving the Boltzmann transport equation, enabling the computation of carrier distribution functions even for spatially three-dimensional device simulations within minutes to hours. We summarize recent progress for the spherical harmonics expansion method and show that small currents, reasonable execution times, and rare events such as low-frequency noise, which are all hard or even impossible to simulate with the established Monte Carlo method, can be handled in a straight-forward manner. The applicability of the method for important practical applications is demonstrated for noise simulation, small-signal analysis, hot-carrier degradation, and avalanche breakdown.
en
dc.description.sponsorship
Austrian Science Fund (FWF)
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dc.description.sponsorship
National Research Foundation of Korea EDISON Program
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dc.language
English
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dc.language.iso
en
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dc.publisher
Springer
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dc.relation.ispartof
Journal of Computational Electronics
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
Spherical harmonics
en
dc.subject
Boltzmann transport equation
en
dc.subject
Semiconductor device simulation
en
dc.subject
Silicon
en
dc.subject
Germanium
en
dc.subject
Hot carrier degradation
en
dc.subject
Box integration
en
dc.title
A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
en
dc.type
Article
en
dc.type
Artikel
de
dc.rights.license
Creative Commons Namensnennung 4.0 International
de
dc.rights.license
Creative Commons Attribution 4.0 International
en
dc.contributor.affiliation
RWTH Aachen University, Germany
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dc.contributor.affiliation
Gwangju Institute of Science and Technology, Korea (the Republic of)
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dc.relation.grantno
P23598
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dc.relation.grantno
P24304
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dc.relation.grantno
W1245.
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dc.relation.grantno
2012M3C1A6035304
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dc.rights.holder
The Author(s) 2016
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dc.type.category
Review Article
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tuw.journal.peerreviewed
true
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tuw.peerreviewed
true
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tuw.version
vor
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wb.publication.intCoWork
International Co-publication
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dcterms.isPartOf.title
Journal of Computational Electronics
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tuw.publication.orgunit
E360 - Institut für Mikroelektronik
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tuw.publisher.doi
10.1007/s10825-016-0828-z
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dc.date.onlinefirst
2016-05-11
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dc.identifier.eissn
1572-8137
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dc.identifier.libraryid
AC11360121
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dc.identifier.urn
urn:nbn:at:at-ubtuw:3-1764
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tuw.author.orcid
0000-0002-0198-3999
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tuw.author.orcid
0000-0001-6536-2238
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tuw.author.orcid
0000-0003-0633-8929
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dc.rights.identifier
CC BY 4.0
de
dc.rights.identifier
CC BY 4.0
en
wb.sci
true
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item.openairecristype
http://purl.org/coar/resource_type/c_dcae04bc
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item.openaccessfulltext
Open Access
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item.openairetype
review article
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item.fulltext
with Fulltext
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item.languageiso639-1
en
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item.grantfulltext
open
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item.cerifentitytype
Publications
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crisitem.author.dept
E360 - Institut für Mikroelektronik
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crisitem.author.dept
RWTH Aachen University
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crisitem.author.dept
Gwangju Institute of Science and Technology
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crisitem.author.dept
E360 - Institut für Mikroelektronik
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crisitem.author.dept
E360 - Institut für Mikroelektronik
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crisitem.author.dept
E101-01 - Forschungsbereich Analysis
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crisitem.author.orcid
0000-0003-0633-8929
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
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crisitem.author.parentorg
E101 - Institut für Analysis und Scientific Computing