<div class="csl-bib-body">
<div class="csl-entry">Aniel, F., Auton, G., Cumming, D., Feiginov, M., Gebert, S., González, T., Li, C., Lisauskas, A., Marinchio, H., Mateos, J., Palermo, C., Song, A., Treuttel, J., Varani, L., & Zerounian, N. (2023). Terahertz Electronic Devices. In M. Rudan, Rossella Brunetti, & S. Reggiani (Eds.), <i>Springer Handbook of Semiconductor Devices</i> (pp. 807–849). https://doi.org/10.1007/978-3-030-79827-7_22</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/135956
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dc.description.abstract
The frequency band of the electromagnetic spectrum between microwaves and infrared is nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development of specific applications for this area requires the use of devices able to operate (for instance, as emitters, detectors, amplifiers, etc.) in this domain of extremely high frequencies. For this purpose, it is necessary to cleverly combine favourable materials and charge transport properties with specific physical mechanisms and appropriate device topologies in order to reach electrical operation in conditions that, with respect to standard electronics, can be considered as extreme. Alternative strategies (not treated in this chapter) involve either the use of optical devices or a combination of electrical and optical systems. Here, we present an overview of the main electronic devices used for applications in the Terahertz frequency domain subdivided into two-terminal devices (such as Gunn, Schottky and resonant-tunnelling diodes) and three-terminal devices (such as field-effect, heterojunction bipolar and complementary metal oxide semiconductor transistors). A section devoted to non-conventional devices exploiting ballistic transport concludes the survey.
en
dc.language.iso
en
-
dc.subject
Terahertz Electronic Devices
en
dc.title
Terahertz Electronic Devices
en
dc.type
Book Contribution
en
dc.type
Buchbeitrag
de
dc.contributor.affiliation
Institute of Electronics and Systems, University of Montpellier, CNRS UMR 5214, Montpellier, France
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dc.contributor.affiliation
Institute of Electronics and Systems, University of Montpellier, CNRS UMR 5214, Montpellier, France
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dc.contributor.editoraffiliation
Department of Electrical, Electronic and Information Engineering and Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy
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dc.contributor.editoraffiliation
Department of Physics, Informatics and Mathematics - FIM, University of Modena and Reggio Emilia, Modena, Italy
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dc.contributor.editoraffiliation
Department of Electrical, Electronic and Information Engineering and Advanced Research Center on Electronic Systems, University of Bologna, Bologna, Italy
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dc.relation.isbn
978-3-030-79827-7
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dc.relation.issn
2522-8706
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dc.description.startpage
807
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dc.description.endpage
849
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dc.type.category
Edited Volume Contribution
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tuw.booktitle
Springer Handbook of Semiconductor Devices
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tuw.peerreviewed
true
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tuw.book.ispartofseries
Springer Handbooks
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tuw.researchTopic.id
Q3
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tuw.researchTopic.id
Q1
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tuw.researchTopic.id
Q4
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tuw.researchTopic.name
Quantum Modeling and Simulation
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tuw.researchTopic.name
Photonics
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.value
40
-
tuw.researchTopic.value
10
-
tuw.researchTopic.value
50
-
tuw.publication.orgunit
E354-01 - Forschungsbereich Microwave and THz Electronics
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tuw.publisher.doi
10.1007/978-3-030-79827-7_22
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dc.description.numberOfPages
43
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tuw.author.orcid
0000-0003-2062-5342
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tuw.author.orcid
0000-0002-7838-8362
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tuw.author.orcid
0000-0002-9589-6721
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tuw.author.orcid
0000-0001-9681-0849
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tuw.author.orcid
0000-0002-3706-3211
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tuw.author.orcid
0000-0001-5654-0039
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tuw.author.orcid
0000-0002-1610-4221
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tuw.author.orcid
0000-0003-4041-7145
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tuw.author.orcid
0000-0001-6550-518X
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tuw.author.orcid
0000-0001-5542-9793
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tuw.author.orcid
0000-0002-3085-9997
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tuw.author.orcid
0000-0002-6512-6371
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wb.sciencebranch
Physik, Astronomie
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
1030
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
50
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wb.sciencebranch.value
50
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item.openairetype
Book Contribution
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item.openairetype
Buchbeitrag
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item.grantfulltext
none
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item.cerifentitytype
Publications
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item.cerifentitytype
Publications
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item.languageiso639-1
en
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http://purl.org/coar/resource_type/c_18cf
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item.openairecristype
http://purl.org/coar/resource_type/c_18cf
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item.fulltext
no Fulltext
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crisitem.author.dept
E120-04 - Forschungsbereich Höhere Geodäsie
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crisitem.author.dept
E354 - Electrodynamics, Microwave and Circuit Engineering
-
crisitem.author.dept
Institute of Electronics and Systems, University of Montpellier, CNRS UMR 5214, Montpellier, France
-
crisitem.author.dept
Institute of Electronics and Systems, University of Montpellier, CNRS UMR 5214, Montpellier, France
-
crisitem.author.orcid
0000-0003-2062-5342
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crisitem.author.orcid
0000-0002-7838-8362
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crisitem.author.orcid
0000-0001-9681-0849
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crisitem.author.orcid
0000-0002-3706-3211
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crisitem.author.orcid
0000-0001-5654-0039
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crisitem.author.orcid
0000-0002-1610-4221
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crisitem.author.orcid
0000-0003-4041-7145
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crisitem.author.orcid
0000-0001-6550-518X
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crisitem.author.orcid
0000-0001-5542-9793
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crisitem.author.orcid
0000-0002-3085-9997
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crisitem.author.orcid
0000-0002-6512-6371
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crisitem.author.parentorg
E120 - Department für Geodäsie und Geoinformation
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik