<div class="csl-bib-body">
<div class="csl-entry">Böckle, R., Sistani, M., Eysin, K., Bartmann, M. G., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2021). Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics. <i>Advanced Electronic Materials</i>, <i>7</i>(3), 2001178. https://doi.org/10.1002/aelm.202001178</div>
</div>
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dc.identifier.issn
2199-160X
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/137400
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dc.language.iso
en
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dc.publisher
WILEY
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dc.relation.ispartof
Advanced Electronic Materials
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dc.subject
Electronic, Optical and Magnetic Materials
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dc.title
Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics