<div class="csl-bib-body">
<div class="csl-entry">Leitgeb, M., Pfusterschmied, G., Schwarz, S., Depuydt, B., Cho, J., & Schmid, U. (2021). Communication-Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide. <i>ECS Journal of Solid State Science and Technology</i>, <i>10</i>(7), 073003. https://doi.org/10.1149/2162-8777/ac10b3</div>
</div>
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dc.identifier.issn
2162-8769
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/137980
-
dc.description.abstract
Photoelectrochemical etching of monocrystalline 4H silicon carbide was performed under constant voltage condition. For the first
time current oscillations were observed that caused a periodic modulation of the resulting pore diameter in etching direction. The
period length of the pore diameter variation could be estimated to be about 20 nm. Additionally, it was observed that the assembly
of the pores in a top down view is a Turing pattern.
en
dc.language.iso
en
-
dc.publisher
ELECTROCHEMICAL SOC INC
-
dc.relation.ispartof
ECS Journal of Solid State Science and Technology
-
dc.subject
Electronic, Optical and Magnetic Materials
-
dc.title
Communication-Current Oscillations in Photoelectrochemical Etching of Monocrystalline 4H Silicon Carbide
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
073003
-
dc.type.category
Original Research Article
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tuw.container.volume
10
-
tuw.container.issue
7
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tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
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wb.publication.intCoWork
International Co-publication
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tuw.researchTopic.id
I8
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tuw.researchTopic.id
M7
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tuw.researchTopic.id
M2
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tuw.researchTopic.name
Sensor Systems
-
tuw.researchTopic.name
Special and Engineering Materials
-
tuw.researchTopic.name
Materials Characterization
-
tuw.researchTopic.value
45
-
tuw.researchTopic.value
35
-
tuw.researchTopic.value
20
-
dcterms.isPartOf.title
ECS Journal of Solid State Science and Technology
-
tuw.publication.orgunit
E366-02 - Forschungsbereich Mikrosystemtechnik
-
tuw.publication.orgunit
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie
-
tuw.publisher.doi
10.1149/2162-8777/ac10b3
-
dc.identifier.eissn
2162-8777
-
dc.description.numberOfPages
3
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tuw.author.orcid
0000-0003-1609-4497
-
wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
-
wb.sciencebranch.oefos
2020
-
wb.facultyfocus
Mikro- und Nanoelektronik
de
wb.facultyfocus
Micro- and Nanoelectronics
en
wb.facultyfocus.faculty
E350
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item.languageiso639-1
en
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item.openairetype
research article
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item.grantfulltext
none
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item.fulltext
no Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
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crisitem.author.dept
E366-02 - Forschungsbereich Mikrosystemtechnik
-
crisitem.author.dept
E366-02 - Forschungsbereich Mikrosystemtechnik
-
crisitem.author.dept
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie
-
crisitem.author.dept
E366 - Institut für Sensor- und Aktuatorsysteme
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crisitem.author.orcid
0000-0003-1609-4497
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crisitem.author.orcid
0009-0008-9310-2597
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crisitem.author.parentorg
E366 - Institut für Sensor- und Aktuatorsysteme
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crisitem.author.parentorg
E366 - Institut für Sensor- und Aktuatorsysteme
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crisitem.author.parentorg
E057 - Facilities und Zentren
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crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
