<div class="csl-bib-body">
<div class="csl-entry">Sistani, M., Böckle, R., Falkensteiner, D., Luong, M. A., den Hertog, M. I., Lugstein, A., & Weber, W. M. (2021). Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic. <i>ACS Nano</i>, <i>15</i>(11), 18135–18141. https://doi.org/10.1021/acsnano.1c06801</div>
</div>
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dc.identifier.issn
1936-0851
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/138121
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dc.language.iso
en
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dc.publisher
AMER CHEMICAL SOC
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dc.relation.ispartof
ACS Nano
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dc.subject
General Engineering
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dc.subject
General Materials Science
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dc.subject
General Physics and Astronomy
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dc.title
Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic