<div class="csl-bib-body">
<div class="csl-entry">Dervic, A., & Zimmermann, H. (2022). SPAD Mixed-Quenching Circuit in 0.35-µm CMOS for Achieving a PDP of 39.2% at 854 nm. In Institute of Electrical and Electronics Engineers (Ed.), <i>2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES 2022)</i> (pp. 116–119). IEEE Xplore. https://doi.org/10.23919/MIXDES55591.2022.9838232</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/139230
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dc.description.abstract
This paper presents a fully-integrated optical sensor with SPAD and mixed quenching/resetting circuit with sensing stage based on a tunable-threshold inverter optimized for the standard 0.35-µm CMOS technology. The presented quencher features a controllable detection threshold voltage and an adjustable total dead time. The quenching circuit 5QC achieves 16.5 V excess bias voltage (five times the supply voltage). The dead time ranges from 7.5 ns to 51.5 ns, which corresponds to a saturation count rate range from 19.4 Mcps to 133.3 Mcps. The quencher is optimized for SPADs with a capacitance ranging from 50 fF up to 400 fF. Using our published measured photon detection probability (PDP) results and extrapolating them, a peak PDP of 75.6% at 652 nm and a PDP of 39.2% at 854 nm is estimated for VEX = 16.5 V. To the authors' best knowledge, the presented PDP result has never been reached before for a fully-integrated SPAD sensor in standard CMOS technology.
en
dc.description.sponsorship
Fonds zur Förderung der wissenschaftlichen Forschung (FWF)
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dc.language.iso
en
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dc.rights.uri
http://rightsstatements.org/vocab/InC/1.0/
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dc.subject
Avalanche photodiode (APD)
en
dc.subject
CMOS technology
en
dc.subject
optical sensor
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dc.subject
photon counting
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dc.subject
quenching circuit
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dc.subject
single-photon avalanche diode (SPAD)
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dc.title
SPAD Mixed-Quenching Circuit in 0.35-µm CMOS for Achieving a PDP of 39.2% at 854 nm
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.rights.license
Urheberrechtsschutz 1.0
de
dc.rights.license
In Copyright 1.0
en
dc.relation.isbn
9781665461764
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dc.description.startpage
116
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dc.description.endpage
119
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dc.relation.grantno
P 28335-N30
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dcterms.dateSubmitted
2022
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dc.rights.holder
copyright 2022 by Department of Microelectronics & Computer Science, Lodz University of Technology
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2022 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES 2022)
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tuw.peerreviewed
true
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tuw.relation.publisher
IEEE Xplore
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tuw.project.title
SPAD-basierte faser-optische CMOS Empfänger
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tuw.researchTopic.id
Q4
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.value
100
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tuw.publication.orgunit
E354-02 - Forschungsbereich Integrated Circuits
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tuw.publisher.doi
10.23919/MIXDES55591.2022.9838232
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dc.description.numberOfPages
4
-
dc.rights.identifier
Urheberrechtsschutz 1.0
de
dc.rights.identifier
In Copyright 1.0
en
tuw.event.name
29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)
en
tuw.event.startdate
23-06-2022
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tuw.event.enddate
24-06-2022
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tuw.event.online
Hybrid
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tuw.event.type
Event for scientific audience
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tuw.event.place
Wroclaw
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tuw.event.country
PL
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tuw.event.institution
Department of Microelectronics and Computer Science, Lodz University of Technology, Poland Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Poland
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tuw.event.presenter
Dervic, Alija
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tuw.event.track
Multi Track
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wb.sciencebranch
Physik, Astronomie
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wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
1030
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
30
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wb.sciencebranch.value
70
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item.openairetype
Inproceedings
-
item.openairetype
Konferenzbeitrag
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item.grantfulltext
restricted
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item.cerifentitytype
Publications
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item.cerifentitytype
Publications
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item.languageiso639-1
en
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item.openairecristype
http://purl.org/coar/resource_type/c_18cf
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item.openairecristype
http://purl.org/coar/resource_type/c_18cf
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item.fulltext
no Fulltext
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crisitem.project.funder
Fonds zur Förderung der wissenschaftlichen Forschung (FWF)
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crisitem.project.grantno
P 28335-N30
-
crisitem.author.dept
E354-02 - Forschungsbereich Integrated Circuits
-
crisitem.author.dept
E354-02 - Forschungsbereich Integrated Circuits
-
crisitem.author.parentorg
E354 - Electrodynamics, Microwave and Circuit Engineering
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crisitem.author.parentorg
E354 - Electrodynamics, Microwave and Circuit Engineering