<div class="csl-bib-body">
<div class="csl-entry">Seyedfaraji, S., Daryani, J. T., Sabry Aly, M. M., & Rehman, S. (2022). EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit. <i>IEEE Access</i>, <i>10</i>, 82144–82155. https://doi.org/10.1109/ACCESS.2022.3194679</div>
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dc.identifier.issn
2169-3536
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/139957
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dc.description.abstract
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaptation is the high write energy and latency. In this paper, we overcome this challenge by exploiting the stochastic switching activity of STT-RAM cells and, in tandem, with circuit-level approximation. We enforce the robustness of our technique by analyzing the vulnerability of write operation against radiation-induced soft errors and applying a low-cost improvement. Due to serious reliability challenges in nanometer-scale technology, the robustness of the proposed circuit is also analyzed in the presence of CMOS and magnetic tunnel junction (MTJ) process variation. Compared to the state-of-the-art, we achieved 33.04% and 5.47% lower STT-RAM write energy and latency, respectively, with a 3.7% area overhead, for memory-centric applications.
en
dc.language.iso
en
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dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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dc.relation.ispartof
IEEE Access
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dc.subject
Approximation
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dc.subject
magnetic tunnel junction (MTJ)
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dc.subject
multimedia application
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dc.subject
spin transfer torque random access memory (STT-RAM)
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dc.title
EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit