<div class="csl-bib-body">
<div class="csl-entry">Stampfer, B., Schanovsky, F., Grasser, T., & Waltl, M. (2020). Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors. <i>Micromachines</i>, <i>11</i>(4). https://doi.org/10.3390/mi11040446</div>
</div>
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dc.identifier.issn
2072-666X
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/140388
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dc.description.abstract
Miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is typically beneficial for their operating characteristics, such as switching speed and power consumption, but at the same time miniaturization also leads to increased variability among nominally identical devices. Adverse effects due to oxide traps in particular become a serious issue for device performance and reliability. While the average number of defects per device is lower for scaled devices, the impact of the oxide defects is significantly more pronounced than in large area transistors. This combination enables the investigation of charge transitions of single defects. In this study, we perform random telegraph noise (RTN) measurements on about 300 devices to statistically characterize oxide defects in a Si/SiO2
technology. To extract the noise parameters from the measurements, we make use of the Canny edge detector. From the data, we obtain distributions of the step heights of defects, i.e., their impact on the threshold voltage of the devices. Detailed measurements of a subset of the defects further allow us to extract their vertical position in the oxide and their trap level using both analytical estimations and full numerical simulations. Contrary to published literature data, we observe a bimodal distribution of step heights, while the extracted distribution of trap levels agrees well with recent studies.
en
dc.language.iso
en
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dc.relation.ispartof
Micromachines
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dc.subject
Electrical and Electronic Engineering
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dc.subject
Control and Systems Engineering
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dc.subject
Mechanical Engineering
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dc.title
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors
en
dc.type
Artikel
de
dc.type
Article
en
dc.type.category
Original Research Article
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tuw.container.volume
11
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tuw.container.issue
4
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tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
tuw.publication.invited
invited
-
tuw.researchTopic.id
Q4
-
tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.value
100
-
dcterms.isPartOf.title
Micromachines
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tuw.publication.orgunit
E360 - Institut für Mikroelektronik
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tuw.publisher.doi
10.3390/mi11040446
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dc.identifier.eissn
2072-666X
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dc.description.numberOfPages
11
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tuw.author.orcid
0000-0001-5424-7488
-
tuw.author.orcid
0000-0001-6042-759X
-
wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch
Nanotechnologie
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.oefos
2100
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wb.facultyfocus
Mikro- und Nanoelektronik
de
wb.facultyfocus
Micro- and Nanoelectronics
en
wb.facultyfocus.faculty
E350
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item.languageiso639-1
en
-
item.fulltext
no Fulltext
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item.openairetype
research article
-
item.grantfulltext
restricted
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
-
item.cerifentitytype
Publications
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.orcid
0000-0001-5424-7488
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik