Record link: 
http://hdl.handle.net/20.500.12708/141853
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Title: 
Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire
en
Citation: 
Park, S. J., Jeon, D.-Y., Sessi, V., Trommer, J., Heinzig, A., Mikolajick, T., Kim, G.-T., & Weber, W. M. (2020). Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire. ACS Applied Materials and Interfaces, 12(39), 43927–43932. https://doi.org/10.1021/acsami.0c12595
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Publisher DOI: 
10.1021/acsami.0c12595
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Park, So Jeong 
Jeon, Dae-Young 
Sessi, Violetta 
Trommer, Jens 
Heinzig, André 
Mikolajick, Thomas 
Kim, Gyu-Tae 
Weber, Walter M. 
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Organisational Unit: 
E362-01 - Forschungsbereich Optoelektronische Materialien 
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Journal: 
ACS Applied Materials and Interfaces 
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ISSN: 
1944-8244
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Date (published): 
2020
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Number of Pages: 
6
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Publisher: 
AMER CHEMICAL SOC
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Peer reviewed: 
Yes
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Keywords: 
General Materials Science
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Research Areas: 
Nanoelectronics: 40%
Surfaces and Interfaces: 20%
Logic and Computation: 40%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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