<div class="csl-bib-body">
<div class="csl-entry">Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., & Asenov, A. (2019). Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors. <i>Materials</i>, <i>12</i>(1), 124. https://doi.org/10.3390/ma12010124</div>
</div>
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1996-1944
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en
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MDPI
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dc.relation.ispartof
Materials
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General Materials Science
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dc.title
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors
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Artikel
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Article
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TU Wien, Austria
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124
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Original Research Article
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12
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1
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Q4
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Nanoelectronics
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Quantum Modelling and Simulation
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50
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Materials
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E360 - Institut für Mikroelektronik
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10.3390/ma12010124
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1996-1944
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2100
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Mikro- und Nanoelektronik
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Micro- and Nanoelectronics
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E350 - Fakultät für Elektrotechnik und Informationstechnik
