<div class="csl-bib-body">
<div class="csl-entry">Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., & Weinbub, J. (2019). Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics. <i>IEEE Transactions on Electron Devices</i>, <i>66</i>(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929</div>
</div>
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0018-9383
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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IEEE Transactions on Electron Devices
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Electrical and Electronic Engineering
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Electronic, Optical and Magnetic Materials
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dc.title
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics
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Artikel
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Article
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3060
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3065
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Original Research Article
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66
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IEEE Transactions on Electron Devices
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10.1109/ted.2019.2916929
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