<div class="csl-bib-body">
<div class="csl-entry">Fleury, C., Simbürger, W., & Pogany, D. (2019). Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors. <i>Microelectronics Reliability</i>, <i>100–101</i>(113331). https://doi.org/10.1016/j.microrel.2019.06.023</div>
</div>
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dc.identifier.issn
0026-2714
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/143369
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dc.language.iso
en
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dc.publisher
PERGAMON-ELSEVIER SCIENCE LTD
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dc.relation.ispartof
Microelectronics Reliability
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dc.subject
Electrical and Electronic Engineering
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dc.subject
Condensed Matter Physics
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dc.subject
Electronic, Optical and Magnetic Materials
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dc.subject
Atomic and Molecular Physics, and Optics
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dc.subject
Safety, Risk, Reliability and Quality
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dc.subject
Surfaces, Coatings and Films
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dc.title
Effect of TLP rise time on ESD failure modes of collector-base junction of SiGe heterojunction bipolar transistors