An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps

Abstract

Despite considerable research efforts, efficient and accurate analog bias temperature instability (BTI) stress and recovery models are still urgently needed to evaluate aging in circuit simulators. We present a model for arbitrary analog BTI stress based on distributed first-order reactions to model the time dynamics responsible for the threshold voltage shift of BTI. We use a single activation energy map, which includes the voltage and temperature dependence of stress and recovery. To validate the model, we present the calculation of the threshold voltage shift after arbitrary gate bias stress with high accuracy, industry-compatible measurement effort, and stress time-independent computational effort and introduce a model suitable for circuit simulations.