<div class="csl-bib-body">
<div class="csl-entry">Gillinger, M., Knobloch, T., Markovic, A., Pfusterschmied, G., Schneider, M., & Schmid, U. (2018). Performance of thin AlxOy, SixNy and AlN passivation layers for high temperature SAW device applications. <i>Materials Science in Semiconductor Processing</i>, <i>81</i>, 1–6. https://doi.org/10.1016/j.mssp.2018.02.028</div>
</div>
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dc.identifier.issn
1369-8001
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/145743
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dc.description.abstract
This paper investigates the potential of passivation coatings for surface acoustic wave devices (SAW) based on aluminum nitride as a piezoelectric layer to operate at temperatures up to 1000 °C and in pure oxygen atmosphere. To increase the durability of SAW devices, a thin passivation layer was deposited on top of the structure, consisting of
either aluminum nitride, alumina or silicon nitride. To investigate the effectivity of the passivation layer as oxygen diffusion barrier, time resolved X-ray diffraction (XRD)
measurements were performed at 1000 °C in pure oxygen atmosphere for up to 24 h. Furthermore, the influence of an additional layer on top of the structure on the SAW performance were examined. Therefore, samples were measured before and after the deposition process. Afterwards, the samples were placed in a furnace in pure oxygen atmosphere to test the robustness of the different layers.
en
dc.language.iso
en
-
dc.publisher
ELSEVIER SCI LTD
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dc.relation.ispartof
Materials Science in Semiconductor Processing
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dc.subject
Mechanical Engineering
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dc.subject
Mechanics of Materials
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dc.subject
Condensed Matter Physics
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dc.subject
General Materials Science
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dc.title
Performance of thin AlxOy, SixNy and AlN passivation layers for high temperature SAW device applications
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
1
-
dc.description.endpage
6
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dc.type.category
Original Research Article
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tuw.container.volume
81
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tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
tuw.researchTopic.id
M2
-
tuw.researchTopic.id
M7
-
tuw.researchTopic.id
I8
-
tuw.researchTopic.name
Materials Characterization
-
tuw.researchTopic.name
Special and Engineering Materials
-
tuw.researchTopic.name
Sensor Systems
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tuw.researchTopic.value
20
-
tuw.researchTopic.value
35
-
tuw.researchTopic.value
45
-
dcterms.isPartOf.title
Materials Science in Semiconductor Processing
-
tuw.publication.orgunit
E366-02 - Forschungsbereich Mikrosystemtechnik
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tuw.publisher.doi
10.1016/j.mssp.2018.02.028
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dc.identifier.eissn
1873-4081
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dc.description.numberOfPages
6
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tuw.author.orcid
0000-0001-5156-9510
-
tuw.author.orcid
0000-0001-9846-7132
-
wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
-
wb.sciencebranch.oefos
2020
-
wb.facultyfocus
Mikro- und Nanoelektronik
de
wb.facultyfocus
Micro- and Nanoelectronics
en
wb.facultyfocus.faculty
E350
-
item.languageiso639-1
en
-
item.openairetype
research article
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item.grantfulltext
none
-
item.fulltext
no Fulltext
-
item.cerifentitytype
Publications
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E366-02 - Forschungsbereich Mikrosystemtechnik
-
crisitem.author.dept
E366-02 - Forschungsbereich Mikrosystemtechnik
-
crisitem.author.dept
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.orcid
0000-0001-5156-9510
-
crisitem.author.orcid
0000-0001-9846-7132
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.parentorg
E366 - Institut für Sensor- und Aktuatorsysteme
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik