<div class="csl-bib-body">
<div class="csl-entry">Capriotti, M., Bahat Treidel, E., Fleury, C., Bethge, O., Ostermaier, C., Rigato, M., Lancaster, S., Brunner, F., Detz, H., Hilt, O., Würfl, J., Pogany, D., & Strasser, G. (2016). Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors. <i>Solid-State Electronics</i>, <i>125</i>, 118–124. https://doi.org/10.1016/j.sse.2016.07.009</div>
</div>
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dc.identifier.issn
0038-1101
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/149151
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dc.language.iso
en
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dc.publisher
PERGAMON-ELSEVIER SCIENCE LTD
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dc.relation.ispartof
Solid-State Electronics
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dc.subject
Electrical and Electronic Engineering
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dc.subject
Condensed Matter Physics
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dc.subject
Electronic, Optical and Magnetic Materials
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dc.subject
Materials Chemistry
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dc.title
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
