For full text please visit: <a href="https://doi.org/10.1364/OE.24.000918" target="_blank">https://doi.org/10.1364/OE.24.000918</a>.
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dc.description.abstract
A lens-less receiver with a monolithically integrated avalanche photodiode (APD) in 0.35 µm BiCMOS technology has been developed for establishing an indoor 2 Gb/s optical wireless communication (OWC) over a distance of 6.5 m with a receiving angle of 22°. Immunity toward background light was demonstrated up to 6000 lux. Four additional PIN photodiodes with highly sensitive differential nonlinear transimpedance amplifiers (TIA) were implemented on the receiver chip for centering the highly collimated transmitter beam position.
en
dc.language
English
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dc.language.iso
en
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dc.publisher
Optical Society of America (OSA)
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dc.relation.ispartof
Optics Express
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dc.title
OWC using a monolithically integrated 200 µm APD OEIC in 0.35 µm BiCMOS technology
en
dc.type
Article
en
dc.type
Artikel
de
dc.rights.holder
2016 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
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dc.type.category
Original Research Article
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tuw.journal.peerreviewed
true
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tuw.peerreviewed
true
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dcterms.isPartOf.title
Optics Express
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tuw.publication.orgunit
E354 - Institute of Electrodynamics, Microwave and Circuit Engineering
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tuw.publisher.doi
10.1364/OE.24.000918
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dc.identifier.eissn
1094-4087
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dc.identifier.libraryid
AC11359685
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dc.identifier.urn
urn:nbn:at:at-ubtuw:3-1159
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tuw.author.orcid
0000-0002-7051-1848
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tuw.author.orcid
0000-0002-8525-6042
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wb.sci
true
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item.languageiso639-1
en
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item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
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item.fulltext
no Fulltext
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item.openairetype
research article
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item.grantfulltext
none
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item.cerifentitytype
Publications
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crisitem.author.dept
E354-02 - Forschungsbereich Integrated Circuits
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crisitem.author.dept
E354 - Electrodynamics, Microwave and Circuit Engineering
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crisitem.author.dept
E354 - Electrodynamics, Microwave and Circuit Engineering
-
crisitem.author.dept
E354-02 - Forschungsbereich Integrated Circuits
-
crisitem.author.dept
E354-02 - Forschungsbereich Integrated Circuits
-
crisitem.author.parentorg
E354 - Electrodynamics, Microwave and Circuit Engineering
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E354 - Electrodynamics, Microwave and Circuit Engineering
-
crisitem.author.parentorg
E354 - Electrodynamics, Microwave and Circuit Engineering