<div class="csl-bib-body">
<div class="csl-entry">Zhong, Z., Wallerberger, M., Tomczak, J. M., Taranto, C., Parragh, N., Toschi, A., Sangiovanni, G., & Held, K. (2015). Electronics with Correlated Oxides: SrVO₃/SrTiO₃ as a Mott Transistor. <i>Physical Review Letters</i>, <i>114</i>(246401). https://doi.org/10.1103/physrevlett.114.246401</div>
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dc.identifier.issn
0031-9007
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/151477
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dc.description.abstract
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO3 on a SrTiO3 substrate are insulating: the thin film geometry lifts the orbital degeneracy, which in turn triggers a first-order Mott-Hubbard transition. Two layers of SrVO3 are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also switch between metal (ON) and insulator (OFF), so that a transistor with ideal ON-OFF switching properties is realized.
en
dc.language.iso
en
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dc.publisher
AMER PHYSICAL SOC
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dc.relation.ispartof
Physical Review Letters
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dc.subject
General Physics and Astronomy
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dc.title
Electronics with Correlated Oxides: SrVO₃/SrTiO₃ as a Mott Transistor
