<div class="csl-bib-body">
<div class="csl-entry">Mairhofer, K., Larisegger, S., Foelske, A., Sauer, M., Friedbacher, G., & Fafilek, G. (2022, September 1). <i>Electrochemistry of Silicon Carbide Semiconductors</i> [Conference Presentation]. 35th European Conference on Surface Science (ECOSS), Luxembourg, Luxembourg.</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/152590
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dc.description.abstract
Due to the distinctive chemical and physical properties of silicon carbide, interest in the material as a substrate for semiconductor industry has risen significantly during the past two decades. As a wide bandgap semiconductor, SiC is known to be highly chemically inert. On one hand, this high stability
opens up a wide field of possible applications, on the other hand it introduces new challenges regarding surface processing. (Photo-assisted) anodic etching as a specific form of wet etching represents a possible approach, for which the particular mechanisms and surface reactions are not elucidated yet.
Modification of n-type SiC is done using a combination of anodic polarization and irradiation with UV light in a liquid electrolyte. In this work, the Si face of SiC wafers is investigated. Different electrolytes relevant for etching, e.g. hydrofluoric acid (HF), sulfuric acid (H2SO4), potassium hydroxide (KOH) and
tetramethylammonium hydroxide (TMAH), are used. Etching in n-SiC occurs according to three fundamental steps: (1) Generation of electron-hole pairs through UV illumination (2) oxidation of Si and C (3) dissolution of SiOx in the electrolyte [1].
The electrochemical measurements are evaluated using highly surface sensitive analytical techniques, such as X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Angle resolved XPS (ARXPS) further allows qualitative and quantitative
analysis of surface species in dependence of depth distribution. Gathering information about surface elements and their quantities, binding states and depth distribution permits to draw a connection between electrochemical processes and measureable surface conditions. Further aspects, like the
effect of etching on surface morphology and roughness, need to be taken into consideration.
References
[1] Zhuang and Edgar, "Wet etching of GaN, AlN, and SiC: A review," Materials Science and Engineering: Reports, vol. 48, no. 1, pp. 1-46, 2005.
en
dc.description.sponsorship
KAI Kompetenzzentrum
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dc.language.iso
en
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dc.subject
silicon carbide
en
dc.subject
XPS
en
dc.subject
AFM
en
dc.subject
electrochemistry
en
dc.subject
photoelectrochemistry
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dc.title
Electrochemistry of Silicon Carbide Semiconductors
en
dc.type
Presentation
en
dc.type
Vortrag
de
dc.relation.grantno
1916-00002
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dc.type.category
Conference Presentation
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tuw.project.title
Elektrochemie von SiC Halbleitern
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tuw.researchinfrastructure
Analytical Instrumentation Center
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tuw.researchTopic.id
M2
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tuw.researchTopic.id
M1
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tuw.researchTopic.name
Materials Characterization
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tuw.researchTopic.name
Surfaces and Interfaces
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tuw.researchTopic.value
60
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tuw.researchTopic.value
40
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tuw.publication.orgunit
E164-04-2 - Forschungsgruppe Elektrochemische Methoden und Korrosion
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tuw.publication.orgunit
E164-01-2 - Forschungsgruppe Oberflächen-, Spurenanalytik und Chemometrie
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tuw.publication.orgunit
E057-05 - Fachbereich Analytical Instrumentation Center
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tuw.author.orcid
0000-0001-7256-6511
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tuw.author.orcid
0000-0003-1720-6032
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tuw.event.name
35th European Conference on Surface Science (ECOSS)
en
dc.description.sponsorshipexternal
Infineon
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tuw.event.startdate
29-08-2022
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tuw.event.enddate
02-09-2022
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tuw.event.online
On Site
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tuw.event.type
Event for scientific audience
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tuw.event.place
Luxembourg
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tuw.event.country
LU
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tuw.event.institution
University of Luxembourg
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tuw.event.presenter
Mairhofer, Katharina
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wb.sciencebranch
Chemie
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wb.sciencebranch.oefos
1040
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wb.sciencebranch.value
100
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item.languageiso639-1
en
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item.openairetype
conference paper not in proceedings
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item.grantfulltext
none
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item.fulltext
no Fulltext
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item.cerifentitytype
Publications
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item.openairecristype
http://purl.org/coar/resource_type/c_18cp
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crisitem.author.dept
E164-04-2 - Forschungsgruppe Elektrochemische Methoden und Korrosion
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crisitem.author.dept
E164 - Institut für Chemische Technologien und Analytik
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crisitem.author.dept
E057-05 - Fachbereich Analytical Instrumentation Center
-
crisitem.author.dept
E057-05 - Fachbereich Analytical Instrumentation Center
-
crisitem.author.dept
E164-01-2 - Forschungsgruppe Oberflächen-, Spurenanalytik und Chemometrie
-
crisitem.author.dept
E164-04-2 - Forschungsgruppe Elektrochemische Methoden und Korrosion
