Wang, W., Hua, D., Zhou, Q., Li, S., Eder, S., Shi, J., Wang, Z., Wang, H., & Liu, W. (2023). Effect of a water film on the material removal behavior of Invar during chemical mechanical polishing. Applied Surface Science, 616, Article 156490. https://doi.org/10.1016/j.apsusc.2023.156490
Chemical mechanical polishing; Molecular dynamics simulation; Subsurface damage; Surface roughness; Water film
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Abstract:
Understanding polishing mechanisms in water-lubricated environments has an important guiding value for surface engineering of precision devices. This work reveals the chemical mechanical polishing (CMP) mechanism of the Invar alloy under water lubrication by use of molecular dynamics simulation. The results show that the appropriate thickness of the water film and polishing speed can significantly reduce the surface roughness of the work piece and eliminate subsurface defects. With the increasing rolling speed, the variation of the surface roughness and subsurface damage thickness exhibits a trend of slowly decreasing and then reaching stability. In addition, with an increase in water film thickness, more defects were formed in the subsurface region due to greater surface stresses, although the roughness could be reduced due to an increase of passivated atoms on the work piece surface. These results would be helpful for understanding the CMP mechanism under water-lubricated conditions and for promoting the development of surface engineering for micro/nano components.
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Project (external):
FFG InTribology1 Natural Science Foundation of China Key Research and Development Program of Shaanxi Province State Key Laboratory for Mechanical Behavior of Materials Fundamental Research Funds for the Central Universities
CC BY 4.0
