<div class="csl-bib-body">
<div class="csl-entry">Podgaynaya, A. (2010). <i>Improvement of safe operating area of power DMOS transistors</i> [Dissertation, Technische Universität Wien]. reposiTUm. http://hdl.handle.net/20.500.12708/160940</div>
</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/160940
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dc.description
Zsfassung in dt. Sprache
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dc.description.abstract
Electrical, electro-thermal destruction and hot-carrier degradation of n- and p-channel lateral and vertical double-diffused MOS in smart power ICs are investigated by electrical pulse experiments, simulations and failure analysis.
en
dc.language
English
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dc.language.iso
en
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dc.subject
DMOS
de
dc.subject
sicherer Betriebsbereich
de
dc.subject
elektrostatische Entladung
de
dc.subject
Rücksprung
de
dc.subject
thermische Instabilität
de
dc.subject
TCAD Simulation
de
dc.subject
hochenergetische Ladungsträger
de
dc.subject
DMOS
en
dc.subject
safe operating area
en
dc.subject
electrostatic discharge
en
dc.subject
snapback
en
dc.subject
thermal instability
en
dc.subject
TCAD simulation
en
dc.subject
hot-carrier stress
en
dc.title
Improvement of safe operating area of power DMOS transistors
