<div class="csl-bib-body">
<div class="csl-entry">Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, P. P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T. Y., & Groeseneken, G. (2011). On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs. <i>Microelectronic Engineering</i>, <i>88</i>(7), 1388–1391. https://doi.org/10.1016/j.mee.2011.03.065</div>
</div>
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dc.identifier.issn
0167-9317
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http://hdl.handle.net/20.500.12708/162277
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en
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dc.publisher
ELSEVIER
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dc.relation.ispartof
Microelectronic Engineering
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dc.subject
Electrical and Electronic Engineering
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dc.subject
Condensed Matter Physics
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dc.subject
Electronic, Optical and Magnetic Materials
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dc.subject
Atomic and Molecular Physics, and Optics
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dc.subject
Surfaces, Coatings and Films
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dc.title
On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs
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dc.type
Artikel
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Article
en
dc.description.startpage
1388
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dc.description.endpage
1391
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dc.type.category
Original Research Article
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88
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7
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C6
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Modelling and Simulation
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100
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Microelectronic Engineering
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E360 - Institut für Mikroelektronik
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tuw.publisher.doi
10.1016/j.mee.2011.03.065
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1873-5568
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4
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Elektrotechnik, Elektronik
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25
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Mikro- und Nanoelektronik
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Micro- and Nanoelectronics
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E350
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en
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research article
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E360 - Institut für Mikroelektronik
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E360 - Institut für Mikroelektronik
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E350 - Fakultät für Elektrotechnik und Informationstechnik
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E350 - Fakultät für Elektrotechnik und Informationstechnik