<div class="csl-bib-body">
<div class="csl-entry">Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., & Nelhiebel, M. (2011). The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps. <i>IEEE Transactions on Electron Devices</i>, <i>58</i>(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543</div>
</div>
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Electrical and Electronic Engineering
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Electronic, Optical and Magnetic Materials
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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
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