<div class="csl-bib-body">
<div class="csl-entry">Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., & Selberherr, S. (2012). Physics-Based Modeling of GaN HEMTs. <i>IEEE Transactions on Electron Devices</i>, <i>59</i>(3), 685–693. https://doi.org/10.1109/ted.2011.2179118</div>
</div>
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dc.identifier.issn
0018-9383
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/163443
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dc.description.abstract
A thorough approach to the investigation of GaN-based high-electron mobility transistors by device simulation is demonstrated. Due to structure and material peculiarities, new comprehensive hydrodynamic models for the electron mobility are developed and calibrated. Relying on this setup, three different independent device technologies are simulated and compared. We further study the pronounced decrease in the transconductance gₘ at higher gate bias. We show that the electric field distribution and the resulting carrier velocity quasi-saturation are the main source for the transconductance collapse.
en
dc.language.iso
en
-
dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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dc.relation.ispartof
IEEE Transactions on Electron Devices
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dc.subject
Electrical and Electronic Engineering
en
dc.subject
Electronic, Optical and Magnetic Materials
en
dc.subject
Gallium compounds
en
dc.subject
HEMTs
en
dc.subject
semiconductor device modeling
en
dc.subject
simulation software
en
dc.title
Physics-Based Modeling of GaN HEMTs
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
685
-
dc.description.endpage
693
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dc.type.category
Original Research Article
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tuw.container.volume
59
-
tuw.container.issue
3
-
tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
wb.publication.intCoWork
International Co-publication
-
tuw.researchTopic.id
C6
-
tuw.researchTopic.name
Modelling and Simulation
-
tuw.researchTopic.value
100
-
dcterms.isPartOf.title
IEEE Transactions on Electron Devices
-
tuw.publication.orgunit
E360 - Institut für Mikroelektronik
-
tuw.publisher.doi
10.1109/ted.2011.2179118
-
dc.identifier.eissn
1557-9646
-
dc.description.numberOfPages
9
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wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik
-
wb.sciencebranch.oefos
25
-
wb.facultyfocus
Mikro- und Nanoelektronik
de
wb.facultyfocus
Micro- and Nanoelectronics
en
wb.facultyfocus.faculty
E350
-
item.languageiso639-1
en
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
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item.fulltext
no Fulltext
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item.openairetype
research article
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item.grantfulltext
restricted
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item.cerifentitytype
Publications
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crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.orcid
0000-0002-5583-6177
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik