<div class="csl-bib-body">
<div class="csl-entry">Chen, S.-H., Griffoni, A., Srivastava, P., Linten, D., Thijs, S., Scholz, M., Denis, M., Gallerano, A., Lafonteese, D., Concannon, A., Vashchenko, V. A., Hopper, P., Bychikhin, S., Pogany, D., Van Hove, M., Decoutere, S., & Groeseneken, G. (2012). HBM ESD Robustness of GaN-on-Si Schottky Diodes. <i>IEEE Transactions on Device and Materials Reliability</i>, <i>12</i>(4), 589–598. https://doi.org/10.1109/tdmr.2012.2217746</div>
</div>
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dc.identifier.issn
1530-4388
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/164432
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dc.language.iso
en
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dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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dc.relation.ispartof
IEEE Transactions on Device and Materials Reliability
-
dc.subject
Electrical and Electronic Engineering
-
dc.subject
Electronic, Optical and Magnetic Materials
-
dc.subject
Safety, Risk, Reliability and Quality
-
dc.title
HBM ESD Robustness of GaN-on-Si Schottky Diodes
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
589
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dc.description.endpage
598
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dc.type.category
Original Research Article
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tuw.container.volume
12
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tuw.container.issue
4
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tuw.journal.peerreviewed
true
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tuw.peerreviewed
true
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tuw.researchTopic.id
Q4
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tuw.researchTopic.id
M1
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tuw.researchTopic.id
M2
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Surfaces and Interfaces
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tuw.researchTopic.name
Materials Characterization
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tuw.researchTopic.value
60
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tuw.researchTopic.value
10
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tuw.researchTopic.value
30
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dcterms.isPartOf.title
IEEE Transactions on Device and Materials Reliability
