<div class="csl-bib-body">
<div class="csl-entry">Ostermaier, C., Pozzovivo, G., Carlin, J.-F., Basnar, B., Schrenk, W., Douvry, Y., Gaquière, C., DeJaeger, J.-C., Čičo, K., Fröhlich, K., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2009). Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation. <i>IEEE Electron Device Letters</i>, <i>30</i>(10), 1030–1032. https://doi.org/10.1109/led.2009.2029532</div>
</div>
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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IEEE Electron Device Letters
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Electrical and Electronic Engineering
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Electronic, Optical and Magnetic Materials
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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
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