<div class="csl-bib-body">
<div class="csl-entry">Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Cico, K., Fröhlich, K., Skriniarova, J., Kovac, J., Strasser, G., Pogany, D., & Gornik, E. (2010). Proposal and Performance Analysis of Normally Off n<sup>+</sup><sup>+</sup> GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier. <i>IEEE Transactions on Electron Devices</i>, <i>57</i>(9), 2144–2154. https://doi.org/10.1109/ted.2010.2055292</div>
</div>
-
dc.identifier.issn
0018-9383
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/167172
-
dc.language.iso
en
-
dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
-
dc.relation.ispartof
IEEE Transactions on Electron Devices
-
dc.subject
Electrical and Electronic Engineering
-
dc.subject
Electronic, Optical and Magnetic Materials
-
dc.title
Proposal and Performance Analysis of Normally Off n⁺⁺ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
2144
-
dc.description.endpage
2154
-
dc.type.category
Original Research Article
-
tuw.container.volume
57
-
tuw.container.issue
9
-
tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
tuw.researchTopic.id
C6
-
tuw.researchTopic.id
Q4
-
tuw.researchTopic.id
Q5
-
tuw.researchTopic.id
M1
-
tuw.researchTopic.id
M2
-
tuw.researchTopic.id
M7
-
tuw.researchTopic.id
M8
-
tuw.researchTopic.name
Modelling and Simulation
-
tuw.researchTopic.name
Nanoelectronics
-
tuw.researchTopic.name
Design and Engineering of Quantum Systems
-
tuw.researchTopic.name
Surfaces and Interfaces
-
tuw.researchTopic.name
Materials Characterization
-
tuw.researchTopic.name
Special and Engineering Materials
-
tuw.researchTopic.name
Structure-Property Relationship
-
tuw.researchTopic.value
2
-
tuw.researchTopic.value
60
-
tuw.researchTopic.value
3
-
tuw.researchTopic.value
8
-
tuw.researchTopic.value
22
-
tuw.researchTopic.value
3
-
tuw.researchTopic.value
2
-
dcterms.isPartOf.title
IEEE Transactions on Electron Devices
-
tuw.publication.orgunit
E362 - Institut für Festkörperelektronik
-
tuw.publisher.doi
10.1109/ted.2010.2055292
-
dc.identifier.eissn
1557-9646
-
dc.description.numberOfPages
11
-
wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik
-
wb.sciencebranch.oefos
25
-
wb.facultyfocus
Mikro- und Nanoelektronik
de
wb.facultyfocus
Micro- and Nanoelectronics
en
wb.facultyfocus.faculty
E350
-
item.languageiso639-1
en
-
item.openairetype
research article
-
item.grantfulltext
none
-
item.fulltext
no Fulltext
-
item.cerifentitytype
Publications
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
-
crisitem.author.dept
E362 - Institut für Festkörperelektronik
-
crisitem.author.dept
E362 - Institut für Festkörperelektronik
-
crisitem.author.dept
E362 - Institut für Festkörperelektronik
-
crisitem.author.dept
E392 - Zentrum für Mikro- und Nanostrukturen
-
crisitem.author.dept
E057-12 - Fachbereich Zentrum für Mikro und Nanostrukturen
