<div class="csl-bib-body">
<div class="csl-entry">Giubertoni, D., Pepponi, G., Sahiner, M. A., Kelty, S. P., Gennaro, S., Bersani, M., Kah, M., Kirkby, K. J., Doherty, R., Foad, M. A., Meirer, F., Streli, C., Woicik, J. C., & Pianetta, P. (2010). Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment. <i>Journal of Vacuum Science and Technology B</i>, <i>28</i>(1), C1B1-C1B5. https://doi.org/10.1116/1.3242637</div>
</div>
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dc.identifier.issn
2166-2746
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/167242
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dc.description.abstract
300-900 °C in a N₂ atmosphere for 10 min. Electrical deactivation has been observed for all the
en
dc.language.iso
en
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dc.publisher
A V S AMER INST PHYSICS
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dc.relation.ispartof
Journal of Vacuum Science and Technology B
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dc.subject
Electrical and Electronic Engineering
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dc.subject
Electronic, Optical and Magnetic Materials
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dc.subject
Instrumentation
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dc.subject
Process Chemistry and Technology
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dc.subject
Surfaces, Coatings and Films
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dc.subject
Materials Chemistry
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dc.title
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
