<div class="csl-bib-body">
<div class="csl-entry">Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., & Selberherr, S. (2007). Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass. <i>IEEE Transactions on Nanotechnology</i>, <i>6</i>(1), 97–100. https://doi.org/10.1109/tnano.2006.888533</div>
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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IEEE Transactions on Nanotechnology
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Electrical and Electronic Engineering
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Computer Science Applications
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Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass
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97
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