<div class="csl-bib-body">
<div class="csl-entry">Trotta, S., Knapp, H., Aufinger, K., Meister, T. F., Bock, J., Dehlink, B., Simburger, W., & Scholtz, A. L. (2007). An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology. <i>IEEE Journal of Solid-State Circuits</i>, <i>42</i>(10), 2099–2106. https://doi.org/10.1109/jssc.2007.905227</div>
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dc.identifier.issn
0018-9200
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/168538
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dc.description.abstract
This paper reports on the design, fabrication, and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The resulting
gain bandwidth product (GBW) is more than 840 GHz. The amplifier consumes a power of 990mWat a supply of 5.5 V.
en
dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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dc.relation.ispartof
IEEE Journal of Solid-State Circuits
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dc.subject
Electrical and Electronic Engineering
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dc.title
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology