<div class="csl-bib-body">
<div class="csl-entry">Wang, Y., Li, H. Z., Yu, C. N., Wu, G. M., Gordon, I., Schattschneider, P., & Van Der Biest, O. (2007). Antimony Induced Crystallization of Amorphous Silicon. <i>Acta Metallurgica Sinica (English Letters)</i>, <i>20</i>(3), 167–170. https://doi.org/10.1016/s1006-7191(07)60021-0</div>
</div>
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dc.identifier.issn
1006-7191
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/169073
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dc.description.abstract
Antimony Induced Crystallization of Amorphous Silicon
Y. Wang a, H.Z. Li b, C.N. Yu a, G.M. Wu c, I. Gordon d, P. Schattschneider e and O. Van Der Biest f
a School of Science, Beijing Institute of Petro-Chemical Technology, Beijing 102617, China
b Center of Engineering Education, Beijing Institute of Petro-Chemical Technology, Beijing 102617, China
c School of Materials Science and Engineering, Beijing Institute of Petro-Chemical Technology, Beijing 102617, China
d Development of Technique, Interuniversity Micro Electronics Center, B-3001 Leuven, Belgium
e School of Materials Science and Engineering, Technische Universität Wien, A-1040 Wien, Austria
f School of Materials Science and Engineering, Katholieke Universiteit Leuven, B-3001 Heverlee (Leuven), Belgium
Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE (molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.
en
dc.language.iso
en
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dc.publisher
CHINESE ACAD SCIENCES, INST METAL RESEARCH
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dc.relation.ispartof
Acta Metallurgica Sinica (English Letters)
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dc.subject
silicon
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dc.subject
Industrial and Manufacturing Engineering
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dc.subject
thin film
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dc.subject
polycrystalline
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dc.subject
Metals and Alloys
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dc.subject
antimony
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dc.title
Antimony Induced Crystallization of Amorphous Silicon
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
167
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dc.description.endpage
170
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dc.type.category
Original Research Article
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tuw.container.volume
20
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tuw.container.issue
3
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tuw.journal.peerreviewed
true
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tuw.peerreviewed
true
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tuw.researchTopic.id
M2
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tuw.researchTopic.name
Materials Characterization
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tuw.researchTopic.value
100
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dcterms.isPartOf.title
Acta Metallurgica Sinica (English Letters)
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tuw.publication.orgunit
E057-02 - Fachbereich Universitäre Serviceeinrichtung für Transmissions- Elektronenmikroskopie
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tuw.publication.orgunit
E138-03 - Forschungsbereich Functional and Magnetic Materials