<div class="csl-bib-body">
<div class="csl-entry">Bakalski, W., Sogl, B., Zannoth, M., Asam, M., Kapfelsperger, B., Berkner, J., Eisener, B., Thomann, W., Marcon, S., Österreicher, W., Napieralska, E., Rampf, E., Scholtz, A. L., & Klepser, B.-U. (2008). A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier. <i>IEEE Journal of Solid-State Circuits</i>, <i>43</i>(9), 1920–1930. https://doi.org/10.1109/jssc.2008.2002337</div>
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dc.identifier.issn
0018-9200
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/170655
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dc.description.abstract
A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35 µm SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and control circuitry for band-select, power loop control and mode dependent quiescent currents. For power control, an on-chip voltage regulation loop is implemented, using an external P-channel MOS-transistor on a laminate module. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak power added efficiency (PAE) is 56% for low-band and 44% for high-band.
en
dc.language.iso
en
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dc.relation.ispartof
IEEE Journal of Solid-State Circuits
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dc.subject
Electrical and Electronic Engineering
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dc.title
A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier
