DC Field
Value
Language
dc.contributor.author
Habas, Predrag
-
dc.contributor.author
Prijić, Z.
-
dc.contributor.author
Pantić, D.
-
dc.date.accessioned
2023-03-14T09:07:48Z
-
dc.date.available
2023-03-14T09:07:48Z
-
dc.date.issued
1995
-
dc.identifier.citation
<div class="csl-bib-body"> <div class="csl-entry">Habas, P., Prijić, Z., &#38; Pantić, D. (1995). The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs. <i>Microelectronic Engineering</i>, <i>28</i>(1–4), 171–174. https://doi.org/10.1016/0167-9317(95)00038-a</div> </div>
-
dc.identifier.issn
0167-9317
-
dc.identifier.uri
http://hdl.handle.net/20.500.12708/174357
-
dc.language.iso
en
-
dc.publisher
Elsevier
-
dc.relation.ispartof
Microelectronic Engineering
-
dc.subject
Electrical and Electronic Engineering
-
dc.subject
Condensed Matter Physics
-
dc.subject
Electronic, Optical and Magnetic Materials
-
dc.subject
Atomic and Molecular Physics, and Optics
-
dc.subject
Surfaces, Coatings and Films
-
dc.title
The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
171
-
dc.description.endpage
174
-
dc.type.category
Original Research Article
-
tuw.container.volume
28
-
tuw.container.issue
1-4
-
tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
dcterms.isPartOf.title
Microelectronic Engineering
-
tuw.publication.orgunit
E360 - Institut für Mikroelektronik
-
tuw.publisher.doi
10.1016/0167-9317(95)00038-a
-
dc.identifier.eissn
1873-5568
-
dc.description.numberOfPages
4
-
wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik
-
wb.sciencebranch.oefos
25
-
item.grantfulltext
restricted
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
-
item.openairetype
research article
-
item.languageiso639-1
en
-
item.cerifentitytype
Publications
-
item.fulltext
no Fulltext
-
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