<div class="csl-bib-body">
<div class="csl-entry">Zimmermann, C., Bethge, O., Lutzer, B., & Bertagnolli, E. (2022). Platinum-assisted post deposition annealing of the n-Ge/Y₂O₃ interface. <i>Semiconductor Science and Technology</i>, <i>31</i>(7), Article 075009. https://doi.org/10.1088/0268-1242/31/7/075009</div>
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dc.identifier.issn
0268-1242
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/175687
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dc.description.abstract
The impact of annealing temperature and annealing duration on the interface properties of n-Ge/Y₂O₃/Pt MOS-capacitors is investigated employing an ultrathin catalytically acting Pt-layer. X-ray photoelectron spectroscopy analysis has been used to verify an enhanced growth of GeO₂ and thermally stabilizing yttrium germanate at the n-Ge/Y₂O₃ interface induced by an oxygen post deposition annealing (PDA). Especially at 500 °C and 550 °C high quality Ge/Y₂O₃ interfaces have been achieved resulting in very low interface trap density of 7.41∗10¹⁰ eV⁻¹ cm⁻². It is shown that either a short oxygen annealing at higher temperatures (550 °C) or a long time annealing at lower temperatures (450 °C) are appropriate to realize low interface trap density (Dᵢₜ). It turns out that a Pt-assisted PDA in combination with a final PMA are needed to reduce hysteresis width significantly and to bring flat band voltages toward ideal values.
en
dc.language.iso
en
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dc.publisher
IOP PUBLISHING LTD
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dc.relation.ispartof
Semiconductor Science and Technology
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dc.subject
electrical characterization
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dc.subject
high-k oxide
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dc.subject
MOS-capacitors
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dc.subject
Pt-assisted PDA
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dc.subject
XPS
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dc.subject
Y₂O₃
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dc.title
Platinum-assisted post deposition annealing of the n-Ge/Y₂O₃ interface