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<div class="csl-entry">Hua, E., Si, L., Dai, K., Wang, Q., Ye, H., Liu, K., Zhang, J., Liu, J., Chen, K., Jin, F., Wang, L., & Wu, W. (2022). Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La⅔ Sr⅓MnO₃ Films. <i>Advanced Materials</i>, <i>34</i>(47), Article 2206685. https://doi.org/10.1002/adma.202206685</div>
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dc.identifier.issn
0935-9648
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/176951
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dc.description.abstract
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, Ru-doping-enhanced AHE in La2/3 Sr1/3 Mn1-x Rux O3 epitaxial films is exploited. As the B-site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from nΩ cm to µΩ cm scale. Ru doping leads to strong competition between the ferromagnetic double-exchange interaction and the antiferromagnetic superexchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. The findings can pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.
en
dc.language.iso
en
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dc.publisher
WILEY-V C H VERLAG GMBH
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dc.relation.ispartof
Advanced Materials
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dc.subject
anomalous Hall effect
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dc.subject
skew-scattering
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dc.subject
spin frustration
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dc.subject
thin films
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dc.subject
transition-metal oxides
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dc.title
Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La⅔ Sr⅓MnO₃ Films