<div class="csl-bib-body">
<div class="csl-entry">Roemer, C., Darbandy, G., Schwarz, M., Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M., Iniguez, B., & Kloes, A. (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. <i>IEEE Journal of the Electron Devices Society</i>, <i>10</i>, 416–423. https://doi.org/10.1109/JEDS.2021.3136981</div>
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dc.identifier.issn
2168-6734
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/187460
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dc.description.abstract
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
en
dc.language.iso
en
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dc.publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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dc.relation.ispartof
IEEE Journal of the Electron Devices Society
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dc.subject
closed-form
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dc.subject
compact modeling
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dc.subject
field emission
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dc.subject
RFET
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dc.subject
SBFET
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dc.subject
Schottky barrier
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dc.subject
thermionic emission
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dc.subject
tunneling current
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dc.title
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors