<div class="csl-bib-body">
<div class="csl-entry">Fuchsberger, A., Wind, L., Sistani, M., Behrle, R., Nazzari, D., Aberl, J., Prado Navarrete, E., Vukŭsić, L., Brehm, M., Schweizer, P., Vogl, L., Maeder, X., & Weber, W. M. (2023). Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts. <i>Advanced Electronic Materials</i>, Article 2201259. https://doi.org/10.1002/aelm.202201259</div>
</div>
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dc.identifier.issn
2199-160X
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/187463
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dc.language.iso
en
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dc.publisher
WILEY
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dc.relation.ispartof
Advanced Electronic Materials
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dc.subject
Field-Effect
en
dc.subject
Transistor
en
dc.subject
SiGe
en
dc.subject
Crystalline
en
dc.title
Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts
en
dc.type
Article
en
dc.type
Artikel
de
dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
-
dc.contributor.affiliation
Johannes Kepler University of Linz, Austria
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dc.contributor.affiliation
Laboratory for Mechanics of Materials and Nanostructures, Thun, Switzerland
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dc.contributor.affiliation
Laboratory for Mechanics of Materials and Nanostructures, Thun, Switzerland
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dc.contributor.affiliation
Laboratory for Mechanics of Materials and Nanostructures, Thun, Switzerland
