<div class="csl-bib-body">
<div class="csl-entry">Roemer Christian, Darbandy, G., Schwarz Mike, Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M., Iniguez, B., & Kloes, A. (2021). Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors. In <i>2021 IEEE Latin America Electron Devices Conference (LAEDC)</i> (pp. 1–4). IEEE. https://doi.org/10.1109/LAEDC51812.2021.9437954</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/187468
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dc.description.abstract
This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs) therefore, the model calculates the drain current which consists of field emission through the Schottky barrier and thermionic emission over the barrier. In order to validate the model, this paper shows results for the calculated current in SBFETs and RFETs compared to transfer characteristics of simulated devices and measurements, which show a good agreement.
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dc.language.iso
en
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dc.subject
closed-form
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dc.subject
compact modeling
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dc.subject
field emission
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dc.subject
RFET
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dc.subject
SBFET
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dc.subject
Schottky barrier
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dc.subject
thermionic emission
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dc.subject
tunneling current
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dc.title
Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors
en
dc.type
Inproceedings
en
dc.type
Konferenzbeitrag
de
dc.contributor.affiliation
Technische Hochschule Mittelhessen, Germany
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dc.relation.isbn
978-1-6654-1510-1
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dc.description.startpage
1
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dc.description.endpage
4
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dc.type.category
Full-Paper Contribution
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tuw.booktitle
2021 IEEE Latin America Electron Devices Conference (LAEDC)
