<div class="csl-bib-body">
<div class="csl-entry">Zarate-Galvez, S., Garcia-Barrientos, A., Lastras-Martinez, L. F., Cardenas-Juarez, M., Macias-Velasquez, S., Filipovic, L., & Arce-Casas, A. (2023). Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode. <i>ECS Journal of Solid State Science and Technology</i>, <i>12</i>(7), Article 076014. https://doi.org/10.1149/2162-8777/ace7c4</div>
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dc.identifier.issn
2162-8769
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/189410
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dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.description.sponsorship
FWF Fonds zur Förderung der wissenschaftlichen Forschung (FWF)
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dc.language.iso
en
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dc.publisher
Electrochemical Society
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dc.relation.ispartof
ECS Journal of Solid State Science and Technology
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dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
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dc.subject
light-emitting diode
en
dc.subject
InGaN
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dc.subject
GaN
en
dc.subject
quantum efficiency
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dc.subject
quantum drift diffusion model
en
dc.title
Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode
en
dc.type
Article
en
dc.type
Artikel
de
dc.rights.license
Creative Commons Namensnennung 4.0 International
de
dc.rights.license
Creative Commons Attribution 4.0 International
en
dc.contributor.affiliation
Instituto de Investigación en Comunicación Óptica, Mexico
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dc.contributor.affiliation
Universidad Autónoma de San Luis Potosí, Mexico
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dc.contributor.affiliation
Instituto de Investigación en Comunicación Óptica, Mexico