<div class="csl-bib-body">
<div class="csl-entry">Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., & Selberherr, S. (2023). Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds. <i>Journal of Applied Physics</i>, <i>133</i>(10), Article 105101. https://doi.org/10.1063/5.0134692</div>
</div>
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dc.identifier.issn
0021-8979
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/189599
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dc.description.abstract
The realization of high interconnect densities for three-dimensional integration demands development of new wafer-to-wafer bonding approaches. Recently introduced Cu-to-Cu wafer-to-wafer hybrid bonding schemes overcome scaling limitations, but like other Cu-based interconnect structures, they are prone to electromigration. Migration and growth of voids, induced by electromigration and mechanical stress, cause Cu-to-Cu hybrid bonds to fail. A comprehensive modeling approach is required to fully understand the complex dynamics of voids with their influencing factors, such as current density, temperature, and mechanical stress. In this work, we utilize such a modeling approach to perform studies of void migration through Cu-to-Cu hybrid bonds. The calculated velocities of the evolving void surface fully correspond to the experimentally observed behavior of voids migrating from the lower pad to the upper diffusion barrier of the upper pad, where they cause electrical failure. The migration velocity of a void in the upper pad is 20% higher than the migration velocity of a void in the bottom pad. Unbalance of the normal velocity distribution at the void surface leads to the transformation of the originally ellipsoid void into a teardrop shape. The simulations provide full insight in the impact of layout geometry, material properties, and operating conditions on void dynamics. In addition, the results enable targeted adjustments of the influencing factors to inhibit void migration and growth in order to delay or to fully prevent Cu-to-Cu hybrid bond failure.
en
dc.language.iso
en
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dc.publisher
AMER INST PHYSICS
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dc.relation.ispartof
Journal of Applied Physics
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dc.subject
electromigration
en
dc.subject
hybrid bonds
en
dc.subject
simulation
en
dc.subject
reliability
en
dc.title
Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds
en
dc.type
Article
en
dc.type
Artikel
de
dc.contributor.affiliation
Imec, Belgium
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dc.contributor.affiliation
Imec, Belgium
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dc.type.category
Original Research Article
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tuw.container.volume
133
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tuw.container.issue
10
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tuw.journal.peerreviewed
true
-
tuw.peerreviewed
true
-
wb.publication.intCoWork
International Co-publication
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tuw.researchTopic.id
M3
-
tuw.researchTopic.id
Q4
-
tuw.researchTopic.id
C6
-
tuw.researchTopic.name
Metallic Materials
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tuw.researchTopic.name
Nanoelectronics
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tuw.researchTopic.name
Modeling and Simulation
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tuw.researchTopic.value
20
-
tuw.researchTopic.value
30
-
tuw.researchTopic.value
50
-
dcterms.isPartOf.title
Journal of Applied Physics
-
tuw.publication.orgunit
E360-01 - Forschungsbereich Mikroelektronik
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tuw.publisher.doi
10.1063/5.0134692
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dc.identifier.articleid
105101
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dc.identifier.eissn
1089-7550
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dc.description.numberOfPages
13
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tuw.author.orcid
0000-0002-5583-6177
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wb.sci
true
-
wb.sciencebranch
Elektrotechnik, Elektronik, Informationstechnik
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wb.sciencebranch.oefos
2020
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wb.sciencebranch.value
100
-
item.cerifentitytype
Publications
-
item.openairecristype
http://purl.org/coar/resource_type/c_2df8fbb1
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item.grantfulltext
restricted
-
item.fulltext
no Fulltext
-
item.languageiso639-1
en
-
item.openairetype
research article
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crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
Imec, Belgium
-
crisitem.author.dept
Imec, Belgium
-
crisitem.author.dept
E360-01 - Forschungsbereich Mikroelektronik
-
crisitem.author.dept
E360 - Institut für Mikroelektronik
-
crisitem.author.orcid
0000-0002-5583-6177
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E360 - Institut für Mikroelektronik
-
crisitem.author.parentorg
E350 - Fakultät für Elektrotechnik und Informationstechnik