<div class="csl-bib-body">
<div class="csl-entry">van Loon, E. G. C. P., Schüler, M., Springer, D., Sangiovanni, G., Tomczak, J. M., & Wehling, T. O. (2023). Coulomb engineering of two-dimensional Mott materials. <i>Npj 2D Materials and Applications</i>, <i>7</i>(1), Article 47. https://doi.org/10.1038/s41699-023-00408-x</div>
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dc.identifier.issn
2397-7132
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/189637
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dc.description.abstract
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
en
dc.description.sponsorship
FWF Fonds zur Förderung der wissenschaftlichen Forschung (FWF)
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dc.language.iso
en
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dc.publisher
NATURE PORTFOLIO
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dc.relation.ispartof
npj 2D Materials and Applications
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dc.subject
electronic structure
en
dc.subject
thin films
en
dc.subject
dielectric materials
en
dc.title
Coulomb engineering of two-dimensional Mott materials
