<div class="csl-bib-body">
<div class="csl-entry">Plankenbichler, E., Limbacher, B., Jaidl, M., Theiner, D., Ertl, M. C., Giparakis, M., Andrews, A. M., Strasser, G., Schwaighofer, A., Lendl, B., & Unterrainer, K. (2023, June 29). <i>Dark Vertical Transport of Electrons in Polaritonic Semiconductor Heterostructures</i> [Conference Presentation]. The International Infrared and Terahertz Quantum Workshop (ITQW 2023), Erice, Italy. http://hdl.handle.net/20.500.12708/189883</div>
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/189883
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dc.description.abstract
Building on our previous experience with resonant tunneling diodes strongly coupled to the cavity field [1], we
present a set of semiconductor heterostructures optimised to study the dark vertical transport of electrons
induced by virtual photons. Recently, many advances have led to a better understanding of the influence of
Casimir photons on quantum systems, including a significant enhancement of conductivity in organic
semiconductors [2], the breakdown of topological protection caused by cavity vacuum fields [3], and the
self-assembly of microcavities due to a balance between Casimir and Van-der-Waals forces [4]. Recent
theories attempt to explain these effects, emphasising the importance of the antiresonant terms in the light matter coupling Hamiltonian [5,6].
We investigate the coupling of electrons to virtual photons using different designs of semiconductor quantum
structures. The first approach utilizes a triple-barrier resonant tunneling diode, as shown in Fig. 1. The
structure is embedded in metal-metal patch resonator arrays which serve both as cavities and electrical
contacts. In this system the cavity leads to an enhanced confinement of the electromagnetic mode, allowing
the strong coupling regime to be reached. Our research involves a measurement of the transport
characteristics at different temperatures, as depicted in Fig. 2. Moreover, in order to verify the strong
coupling behaviour IR-spectroscopy measurements were performed (Fig. 3) which clearly show the
polariton-splitting due to the interaction with the intersubband transition of the resonant tunneling diode.
The second approach, depicted in Fig. 4, includes the design of a QWIP-like multi quantum well structure.
Research performed on QWIPs operating in the strong coupling regime not only led to an enhancement of
their performance capabilities but also enabled a better understanding of the fundamental behaviour of
polaritonic devices [7]. As the basic building blocks of a QWIP are well-understood, it can be used as a
tool to gain a deep insight into the coupling of electrons and virtual photons, which is a key objective of
our work.
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dc.language.iso
en
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dc.subject
Terahertz
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dc.subject
Quantum
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dc.subject
Cascade
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dc.subject
Semiconductor Heterostructures
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dc.title
Dark Vertical Transport of Electrons in Polaritonic Semiconductor Heterostructures